A versatile compact model for ballistic 1D transistor: GNRFET and CNTFET comparison

This paper presents a versatile compact model dedicated to 1D transistors in order to predict the ultimate performances of nano-device-based circuits. We have developed a thermionic charge model based on the non-parabolic-energy-dispersion-relation NPEDR. The model is valid for both CNTFET and GNRFET. Model results are compared with GNRFET NEGF simulations. Then, GNRFET and CNTFET performances are analysed through two circuit demonstrators such as a ring oscillator circuit and 6T RAM.