کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
753258 | 895505 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electron magnetoresistance mobility in silicon-on-insulator layers using Kelvin's technique
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electron magnetoresistance mobility in silicon-on-insulator layers using Kelvin's technique Electron magnetoresistance mobility in silicon-on-insulator layers using Kelvin's technique](/preview/png/753258.png)
چکیده انگلیسی
The electron mobility in silicon-on-insulator (SOI) layers has been extracted from magnetoresistance data measured on a four concentric ring test structure, operating in pseudo-MOS configuration, using Kelvin's technique. Ohmic contacts were fabricated using a thermally evaporated erbium/silver double layer. The relative magnetoresistance versus magnetic field characteristics demonstrated classic quadratic behavior allowing for straightforward extraction of magnetoresistance mobility. The technique does not require any correction to be applied due to contact resistance or geometrical effects. The electron mobility extracted using magnetoresistance technique is discussed and compared with theoretical predictions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 54, Issue 9, September 2010, Pages 1047-1050
Journal: Solid-State Electronics - Volume 54, Issue 9, September 2010, Pages 1047-1050
نویسندگان
J. Antoszewski, J.M. Dell, L. Faraone, N. Bresson, S. Cristoloveanu,