کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
753293 895509 2009 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Mobility extraction in SOI MOSFETs with sub 1 nm body thickness
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Mobility extraction in SOI MOSFETs with sub 1 nm body thickness
چکیده انگلیسی

In this work we discuss limitations of the split-CV method when it is used for extracting carrier mobilities in devices with thin silicon channels like FinFETs, ultra thin body silicon-on-insulator (UTB-SOI) transistors and nanowire MOSFETs. We show that the high series resistance may cause frequency dispersion during the split-CV measurements, which leads to underestimating the inversion charge density and hence overestimating mobility. We demonstrate this effect by comparing UTB-SOI transistors with both recessed-gate UTB-SOI devices and thicker conventional SOI MOSFETs. In addition, the intrinsic high series access resistance in UTB-SOI MOSFETs can potentially lead to an overestimation of the effective internal source/drain voltage, which in turn results in a severe underestimation of the carrier mobility. A specific MOSFET test structure that includes additional 4-point probe channel contacts is demonstrated to circumvent this problem. Finally, we accurately extract mobility in UTB-SOI transistors down to 0.9 nm silicon film thickness (four atomic layers) by utilizing the 4-point probe method and carefully choosing adequate frequencies for the split-CV measurements. It is found that in such thin silicon film thicknesses quantum mechanical effects shift the threshold voltage and degrade mobility.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 53, Issue 12, December 2009, Pages 1246–1251
نویسندگان
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