کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
753379 | 895522 | 2009 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
PSP-SOI: An advanced surface potential based compact model of partially depleted SOI MOSFETs for circuit simulations
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: PSP-SOI: An advanced surface potential based compact model of partially depleted SOI MOSFETs for circuit simulations PSP-SOI: An advanced surface potential based compact model of partially depleted SOI MOSFETs for circuit simulations](/preview/png/753379.png)
چکیده انگلیسی
This paper reports recent progress in partially depleted (PD) SOI MOSFET modeling using a surface potential based approach. The new model is formulated within the framework of the latest industry standard bulk MOSFET model PSP. In addition to its physics-based formulation and scalability inherited from PSP, PSP-SOI captures SOI specific effects by including floating body simulation capability, parasitic body currents and capacitances. A nonlinear body resistance model is included for accurate characterization and simulation of body-contacted SOI devices. The PSP-SOI model has been verified using test data from 90 nm to 65 nm PD/SOI processes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 53, Issue 1, January 2009, Pages 18–29
Journal: Solid-State Electronics - Volume 53, Issue 1, January 2009, Pages 18–29
نویسندگان
W. Wu, X. Li, G. Gildenblat, G.O. Workman, S. Veeraraghavan, C.C. McAndrew, R. van Langevelde, G.D.J. Smit, A.J. Scholten, D.B.M. Klaassen, J. Watts,