کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
753429 | 895526 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Bismuth doped ZnSe films fabricated on silicon substrates by pulsed laser deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
The preparation of bismuth doped ZnSe films on silicon (1 0 0) by pulsed laser deposition (PLD) is reported. Bismuth was used as a p-type dopant source material for ZnSe. The stable p-type films with hole carrier concentration of about 1016–1018 cm−3 were obtained. By scanning electron microscopy (SEM) and X-ray diffraction (XRD), it was found that the ambient pressure during film deposition has much to do with the morphology and crystallinity of the as-deposited products. The presence of Bi in the Bi-doped ZnSe films was confirmed by the X-ray photoelectron spectroscopy (XPS) and the possibility of a BiZn–2VZn complex forming a shallow acceptor level was discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 52, Issue 11, November 2008, Pages 1833–1836
Journal: Solid-State Electronics - Volume 52, Issue 11, November 2008, Pages 1833–1836
نویسندگان
Yiqun Shen, Ning Xu, Wei Hu, Xiaofeng Xu, Jian Sun, Zhifeng Ying, Jiada Wu,