Comparative study of the fabricated and simulated Impact Ionization MOS (IMOS)

Drift diffusion phenomena limits the subthreshold slope of conventional MOSFET to 60 mV/dec at room temperature. This paper deals with a new type of device, the Impact Ionization MOS (IMOS), which exhibits subthreshold slopes down to a few mV/dec. The electrical results of the fabricated IMOS are analysed and the scalability of this device is investigated thanks to TCAD simulations. The scaling of the dimensions allows a drastic reduction of the supply voltage and higher ON currents, but nanometer-large IMOS exhibit higher OFF current too due to Band-to-Band Tunnelling.