کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
753536 | 895544 | 2007 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
An explicit current–voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: An explicit current–voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration An explicit current–voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration](/preview/png/753536.png)
چکیده انگلیسی
An explicit current–voltage model for undoped double-gate MOSFETs based on an accurate analytic approximation to the carrier concentration is presented in this paper. An analytic approximation solution to the carrier (electron) concentration is derived from the Taylor expansion of the exact solution of the Poisson equation. This analytic approximation gives a highly accurate result of the electron concentration when compared with that evaluated by Newton–Raphson iterative. The resulting electron concentration is then coupled to the Pao–Sah current equation to produce an explicit current–voltage model for symmetric undoped double-gate MOSFETs. The model predictions have been extensively validated by numerical simulations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 51, Issue 1, January 2007, Pages 179–185
Journal: Solid-State Electronics - Volume 51, Issue 1, January 2007, Pages 179–185
نویسندگان
Jin He, Wei Bian, Yadong Tao, Feng Liu, Kailiang Lu, Wen Wu, Ting Wang, Mansun Chan,