کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7714168 | 1497437 | 2015 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of hydrogen annealing on the optoelectronic properties of WO3 thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Influence of hydrogen annealing on the optoelectronic properties of WO3 thin films Influence of hydrogen annealing on the optoelectronic properties of WO3 thin films](/preview/png/7714168.png)
چکیده انگلیسی
The optoelectronic properties of WO3 thin films were investigated after hydrogen treatment. Thin films were deposited on heated substrates by the thermal evaporation and were subsequently annealed at various temperatures in hydrogen for 2Â h. Structural studies were performed using X-ray diffraction and atomic force microscopy. As-deposited films were amorphous and became crystalline by thermal annealing. The chemical properties were characterized by X-ray photoelectron spectroscopy, and revealed reduction in stoichiometry and the presence of oxygen vacancies in the films as a result of hydrogen annealing. Spectrophotometric measurements showed that the transmittance of the films was decreased consistently with hydrogen annealing. Significant changes in the optical constants and indirect band gap were noticed. Hall measurements showed the significantly reduced electrical resistivity due to the presence of oxygen vacancies.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Hydrogen Energy - Volume 40, Issue 36, 28 September 2015, Pages 12343-12351
Journal: International Journal of Hydrogen Energy - Volume 40, Issue 36, 28 September 2015, Pages 12343-12351
نویسندگان
M. Saleem, M.F. Al-Kuhaili, S.M.A. Durrani, A.H.Y. Hendi, I.A. Bakhtiari, S. Ali,