کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7724472 | 1497590 | 2011 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Room temperature sensing properties of networked GaN nanowire sensors to hydrogen enhanced by the Ga2Pd5 nanodot functionalization
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Room temperature sensing properties of networked GaN nanowire sensors to hydrogen enhanced by the Ga2Pd5 nanodot functionalization Room temperature sensing properties of networked GaN nanowire sensors to hydrogen enhanced by the Ga2Pd5 nanodot functionalization](/preview/png/7724472.png)
چکیده انگلیسی
Multiple-networked GaN nanowires with excellent sensing properties to hydrogen were realized by functionalizing their surfaces with Ga2Pd5-related nanodots. Compared to the bare-GaN nanowire sensors, functionalization improved the relative resistance responses by a factor of >50 at H2 concentrations ranging from 100 to 2000Â ppm. At room temperature, the nanodot-functionalized GaN nanowire sensors exhibited a relative resistance response of 34.1% at 100Â ppm H2. Interestingly, a shell layer was transformed mostly into Ga2Pd5-phased nanodots, which was confirmed by X-ray diffraction and transmission electron microscopy. The mechanisms responsible for the improvement induced by nanodot functionalization are proposed in terms of the hydrogen spillover effect.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Hydrogen Energy - Volume 36, Issue 3, February 2011, Pages 2313-2319
Journal: International Journal of Hydrogen Energy - Volume 36, Issue 3, February 2011, Pages 2313-2319
نویسندگان
Sang Sub Kim, Jae Young Park, Sun-Woo Choi, Hyo Sung Kim, Han Gil Na, Ju Chan Yang, Chongmu Lee, Hyoun Woo Kim,