کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7724472 | 1497590 | 2011 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Room temperature sensing properties of networked GaN nanowire sensors to hydrogen enhanced by the Ga2Pd5 nanodot functionalization
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
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چکیده انگلیسی
Multiple-networked GaN nanowires with excellent sensing properties to hydrogen were realized by functionalizing their surfaces with Ga2Pd5-related nanodots. Compared to the bare-GaN nanowire sensors, functionalization improved the relative resistance responses by a factor of >50 at H2 concentrations ranging from 100 to 2000Â ppm. At room temperature, the nanodot-functionalized GaN nanowire sensors exhibited a relative resistance response of 34.1% at 100Â ppm H2. Interestingly, a shell layer was transformed mostly into Ga2Pd5-phased nanodots, which was confirmed by X-ray diffraction and transmission electron microscopy. The mechanisms responsible for the improvement induced by nanodot functionalization are proposed in terms of the hydrogen spillover effect.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Hydrogen Energy - Volume 36, Issue 3, February 2011, Pages 2313-2319
Journal: International Journal of Hydrogen Energy - Volume 36, Issue 3, February 2011, Pages 2313-2319
نویسندگان
Sang Sub Kim, Jae Young Park, Sun-Woo Choi, Hyo Sung Kim, Han Gil Na, Ju Chan Yang, Chongmu Lee, Hyoun Woo Kim,