کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
77562 | 49286 | 2016 | 6 صفحه PDF | دانلود رایگان |
• ITO layers and AgNWs were combined for a functional electrode.
• High transmittance was achieved from ITO/AgNW/ITO structure.
• Transparent conductor-embedding heterojunction solar cell was formed.
The present work describes a method for the development of an efficient silver nanowire (AgNWs) embedded indium tin oxide (ITO) based silicon heterojunction solar cell. The working mechanism of the heterojunction solar cell is studied by using the current-voltage (J-V) and Impedance spectroscopy (IS) techniques. The charge transfer mechanism and recombination process of the solar cell were explained by resistance, capacitance and ideality factor derived from both these techniques. A relatively high efficiency has been achieved for AgNWs embedded ITO-Si heterojunction solar cell in which AgNWs network acts as a transparent buried contact. This study also provides a new architecture for various heterojunction solar cells with a simple route of fabrication.
Journal: Solar Energy Materials and Solar Cells - Volume 154, September 2016, Pages 65–70