|کد مقاله||کد نشریه||سال انتشار||مقاله انگلیسی||ترجمه فارسی||نسخه تمام متن|
|77577||49287||2016||6 صفحه PDF||سفارش دهید||دانلود رایگان|
• Highest efficiency of 5-in. n-type PERT cell was 21.98% using industrially technology.
• An average of 21.85% cell efficiency was achieved.
• Power loss analysis on Voc, Isc and FF are presented.
A high-efficiency front junction n-type passivated emitter and a rear total diffusion (n-type PERT) solar cell with the front boron diffusion passivated by a Al2O3/SiNx stack layer deposited by plasma enhanced chemical vapor method and the rear with phosphorus total diffusion and Al evaporated local contact are presented in this paper. The main purpose of this study was to develop industrially feasible front junction n-type PERT solar cells with high-efficiency; these were realized on a large area of n-type industrial 5- and 6-in. wafers. An average of 21.85% cell efficiency was achieved on 5-in. wafers, and the highest cell convert efficiency of 21.98% was achieved with Voc of 683.8 mV, Jsc of 40.13 mA/cm2, and FF of 80.11%. For 6-in. cells, we get Fraunhofer independently confirmed efficiency of 21.49% with a Voc of 674.1 mV, a Jsc of 39.77 mA/cm2, a FF of 80.18%. Details of cell fabrication and results are presented, followed by a best cell power loss analysis on Voc, Isc and FF.
Journal: Solar Energy Materials and Solar Cells - Volume 152, August 2016, Pages 59–64