Stable metal-insulator transition in epitaxial SmNiO3 thin films

► Stable SmNiO3 films grown by rf sputtering without extreme annealing conditions. ► High sputtering pressures needed to fully stabilize SmNiO3. ► Reversible metal-insulator transition observed at ∼400 K, similar to bulk. ► Electrical properties strongly modifiable by varying sputtering pressure.