کد مقاله کد نشریه سال انتشار مقاله انگلیسی ترجمه فارسی نسخه تمام متن
77643 49291 2016 5 صفحه PDF سفارش دهید دانلود کنید
عنوان انگلیسی مقاله ISI
Fundamental understanding, impact, and removal of boron-rich layer on n-type silicon solar cells
ترجمه فارسی عنوان
فهم اساسی، تاثیر و حذف لایه غنی از بورون بر سلول های خورشیدی سیلیکونی نوع n
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی کاتالیزور
چکیده انگلیسی

Most boron diffusion technologies result in the formation of an undesirable boron-rich layer (BRL) on the emitter surface. This paper reports on a study of the impact of gradual etching of the BRL on n-type silicon solar cell performance. It is found that gradual removal of the BRL improves surface passivation and bulk lifetime in the finished cell, while over-etching of the BRL results in a sharp decrease in fill factor due to the increased n-factor and series resistance. It is shown that the optimum chemical etching of the BRL formed as a byproduct of the screen-printed boron emitter diffusion used in this study raised the cell efficiency by ~0.5%, resulting in 20.0% efficient large area (239 cm2) n-type solar cells. The change in BRL thickness and morphology as a function of chemical etching time was investigated by TEM and AES measurements to explain the quantitative impact of BRL removal on cell performance.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 146, March 2016, Pages 58–62
نویسندگان
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