کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
77895 | 49309 | 2015 | 10 صفحه PDF | دانلود رایگان |

• 0.4% absolute efficiency enhancement by the incorporation of a laser doped selective emitter into a PERC cell structure.
• Peak efficiency of 20.5% obtained.
• Faster processing speeds (>2m/s) observed to cause less bulk damage than slower processing speeds.
In this work, we present the incorporation of a laser doped selective emitter into the i-PERC platform at Imec using large area magnetically confined boron-doped Czochralski grown silicon wafers. Cells were fabricated with self-aligned plated n-type contacts with a comparison between the use of a homogenous emitter with contact openings formed by picosecond laser ablation and a selective emitter formed by laser doping with a mode-locked UV laser using various processing speeds. Without modification to other processes in the i-PERC platform, improvements in efficiency of approximately 0.4% absolute were obtained with the inclusion of the selective emitter structure through improvements in open circuit voltage, fill factor and reduced series resistance. This resulted in peak efficiencies of 20.5% using a processing speed for laser doping of 5 m/s.
Journal: Solar Energy Materials and Solar Cells - Volume 134, March 2015, Pages 89–98