کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
78059 | 49315 | 2014 | 7 صفحه PDF | دانلود رایگان |
• Development of a modified masking method for measuring Voc of single solar cells.
• Visualizing defects’ influence on the surrounding solar cell.
• Relation between the IR-signal emitted of a defect and respective cell voltage.
CuInGaSe2 (CIGS) thin film solar modules, despite their high efficiency, may contain three different kinds of macroscopic defects referred to as bulk defects, interface defects and interconnect defects. This occurs due to film's sensitivity to inhomogeneities during the manufacturing process. The result is a decrease of electrical power output from a cell or module. In this paper, we present the influence of macroscopic defects on the electrical behavior of CIGS thin film solar cells. To accomplish this, we investigated the relation between the IR-signal emitted of a defect in a cell (measured using illuminated lock-in thermography ILIT) and the respective open circuit cell voltage (Voc,cell) under low light conditions (< 100 W/m²). Furthermore, we developed a modified masking method of measuring Voc,cell of a single cell within a thin film solar module.
Journal: Solar Energy Materials and Solar Cells - Volume 123, April 2014, Pages 159–165