کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
78108 49316 2014 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Improved antireflection properties and optimized structure for passivation of well-separated, vertical silicon nanowire arrays for solar cell applications
ترجمه فارسی عنوان
خواص ضد انفجار بهبود یافته و ساختار بهینه شده برای پاسیابی آرایه های نانوسیم سیلیکونی به خوبی جدا شده برای کاربردهای سلول خورشیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی کاتالیزور
چکیده انگلیسی


• The fabrication method is simple, controllable, and low-cost.
• Well-separated and vertically aligned SiNW arrays were fabricated.
• The reflectance of array is less than 1% over a wide wavelength range.
• Conformal coating of a-Si on SiNWs was realized by PECVD for effective passivation.

Large-area, well-separated, and vertically aligned silicon nanowire (SiNW) arrays with excellent antireflection properties were fabricated through a combination of anodic aluminum oxide template and metal-assisted chemical etching, followed by supercritical drying. Less than 1% reflectance was achieved over the wavelength range of 200–600 nm, and 23% reduction in average reflectance was observed over the 200–1000 nm range, compared with the conical-frustum structure array by natural drying. Furthermore, the well-separated SiNW arrays considerably facilitated the conformal coating of the plasma-enhanced chemical vapor deposited amorphous silicon layer on the SiNW surface, which could result in effective passivation of surface states. Therefore, such well-separated and vertically aligned SiNW arrays are highly promising for solar cell application.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 125, June 2014, Pages 248–252
نویسندگان
, , , , , , , ,