Chalcogenisation of Cu–Sb metallic precursors into Cu3Sb(SexS1−x)3

Cu3SbS3 is a novel chalcogenide semiconductor with p-type conductivity and an energy bandgap of 1.84 eV. By incorporating selenium into this material to form Cu3Sb(SexS1−x)3 where x=Se/(Se+S), the energy bandgap can be altered to be in the range 1.38–1.84 eV for 0

► Fabrication of Cu3SbS3 thin films by sulfurization of metallic precursors.
► Photoactive p-type Cu3SbS3 films have an energy bandgap of 1.84 eV.
► Cu3Sb(SexS1−x)3 thin film produced by combined selenisation/sulphurisation.
► Tuneable energy bandgap from 1.84 eV to 1.38 eV for 0