کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7831806 1503277 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fabrication and Luminescent Properties of 6H-SiC/3C-SiC/6H-SiC Quantum Well Structure
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Fabrication and Luminescent Properties of 6H-SiC/3C-SiC/6H-SiC Quantum Well Structure
چکیده انگلیسی
Quantum well structure film of 6H-SiC/3C-SiC/6H-SiC was fabricated on 6H-SiC (0001) with the substrate temperature of 1350 K by solid source molecular beam epitaxy (SSMBE) through the variation of Si flux rate. The crystal polytypes and luminescent properties of the film were characterized by reflection high energy electron diffraction (RHEED) and photoluminescence (PL), respectively. The results of RHEED indicated that the film was 6H-SiC/3C-SiC/6H-SiC with the quantum well structure. The results of PL excited by He-Gd laser at room temperature showed that there were intense emissions in the range of 480-600 nm, which could not be observed from the substrate. The fitting peaks were consistent with the results calculated from the model of quantum well structure, which showed that such intense emissions were probably from the quantum wells with different widths.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Acta Physico-Chimica Sinica - Volume 24, Issue 4, April 2008, Pages 571-575
نویسندگان
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