کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7832777 | 1503513 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Long-term stability of photodetectors based on graphene field-effect transistors encapsulated with Si3N4 layers
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Graphene photodetectors have drawn a lot of interest due to their superior properties. For entering real applications, the existing open-face graphene photodetectors need to be properly protected to obtain long term stability. Here we demonstrate a facile method to obtain air-stable graphene photodetectors by directly depositing Si3N4 layer on the surface of buried-gate graphene field-effect transistors (GFETs). The electrical and photoelectrical properties of the Si3N4-encapsulated GFETs were carefully investigated and compared with that of the reference open-face GFETs. A photoresponsivity of 6.3â¯mA/W was obtained under a gate bias of 6â¯V, which was over 4 times higher than the photoresponsivities of typical back-gated GFET photodetectors under gate biases up to 80â¯V. Furthermore, the Si3N4-encapsulated GFET photodetectors demonstrated good stability for several months.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 459, 30 November 2018, Pages 164-170
Journal: Applied Surface Science - Volume 459, 30 November 2018, Pages 164-170
نویسندگان
Fang Su, Zhaohao Zhang, Shasha Li, Peian Li, Tao Deng,