کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7832777 1503513 2018 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Long-term stability of photodetectors based on graphene field-effect transistors encapsulated with Si3N4 layers
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Long-term stability of photodetectors based on graphene field-effect transistors encapsulated with Si3N4 layers
چکیده انگلیسی
Graphene photodetectors have drawn a lot of interest due to their superior properties. For entering real applications, the existing open-face graphene photodetectors need to be properly protected to obtain long term stability. Here we demonstrate a facile method to obtain air-stable graphene photodetectors by directly depositing Si3N4 layer on the surface of buried-gate graphene field-effect transistors (GFETs). The electrical and photoelectrical properties of the Si3N4-encapsulated GFETs were carefully investigated and compared with that of the reference open-face GFETs. A photoresponsivity of 6.3 mA/W was obtained under a gate bias of 6 V, which was over 4 times higher than the photoresponsivities of typical back-gated GFET photodetectors under gate biases up to 80 V. Furthermore, the Si3N4-encapsulated GFET photodetectors demonstrated good stability for several months.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 459, 30 November 2018, Pages 164-170
نویسندگان
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