کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
78378 49330 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Silicon nanocrystals in an oxide matrix for thin film solar cells with 492 mV open circuit voltage
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی کاتالیزور
پیش نمایش صفحه اول مقاله
Silicon nanocrystals in an oxide matrix for thin film solar cells with 492 mV open circuit voltage
چکیده انگلیسی

We have fabricated solar cells with layers of co-sputtered silicon and silicon dioxide. The diode structures were fabricated by sputtering alternating layers of SiO2 and silicon rich oxide onto quartz substrates with in-situ boron, for p-type, and phosphorus, for n-type, doping. After crystallization at 1100 °C, isolated Si-nanocrystals are formed. The thin film layers containing these crystals act as n-type or p-type semiconductors as determined from CV measurements on MOS structures. The dark and illuminated I–Vs of the fabricated diodes show a rectifying behavior with an open circuit voltage of 492 mV under a simulated 1.5AMD illumination. A circuit model is proposed to explain the observed I–V characteristics.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 100, May 2012, Pages 65–68
نویسندگان
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