کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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78378 | 49330 | 2012 | 4 صفحه PDF | دانلود رایگان |

We have fabricated solar cells with layers of co-sputtered silicon and silicon dioxide. The diode structures were fabricated by sputtering alternating layers of SiO2 and silicon rich oxide onto quartz substrates with in-situ boron, for p-type, and phosphorus, for n-type, doping. After crystallization at 1100 °C, isolated Si-nanocrystals are formed. The thin film layers containing these crystals act as n-type or p-type semiconductors as determined from CV measurements on MOS structures. The dark and illuminated I–Vs of the fabricated diodes show a rectifying behavior with an open circuit voltage of 492 mV under a simulated 1.5AMD illumination. A circuit model is proposed to explain the observed I–V characteristics.
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Journal: Solar Energy Materials and Solar Cells - Volume 100, May 2012, Pages 65–68