کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
78383 49330 2012 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Theoretical analysis of effects of deep level, back contact, and absorber thickness on capacitance–voltage profiling of CdTe thin-film solar cells
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی کاتالیزور
پیش نمایش صفحه اول مقاله
Theoretical analysis of effects of deep level, back contact, and absorber thickness on capacitance–voltage profiling of CdTe thin-film solar cells
چکیده انگلیسی

The apparent carrier density profile measured by the capacitance–voltage technique in CdTe thin-film solar cells frequently displays a distinctive U-shape. We show that, even assuming a uniform carrier density, such a U-shape may arise from deep levels, a non-ohmic back-contact, and a thin absorber, which are commonly present in practical CdTe thin-film solar cells. A thin CdTe absorber contributes to the right branch of the U-shape due to a punch-through effect at reverse or zero biases, when the CdTe absorber is nearly fully depleted. A rectifying back-contact contributes to both branches of the U-shape due to voltage sharing with the front junction under a forward bias and early punch-through under a reverse bias. Deep levels contribute to the right branch, but also raise the bottom of the U-shape, leading to an overestimate of carrier density.

Graphical AbstractFigure optionsDownload as PowerPoint slideHighlights
► We study the U-shaped carrier density profile in CdTe thin-film solar cells.
► Punch-through of thin CdTe absorbers leads to the right branch of the U-shape.
► Back contact contributes to both the right and left branches of the U-shape.
► Deep levels raise the bottom of the U-shape and contribute to the right branch.
► Best place to extract the carrier density is at the bottom of the U-shape.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 100, May 2012, Pages 126–131
نویسندگان
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