کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7839731 | 1505860 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots](/preview/png/7839731.png)
چکیده انگلیسی
Carrier dynamics including carrier relaxation and tunneling within a coupled InAs quantum dot (QD) - In0.15Ga0.85As quantum well (QW) hybrid nanostructure are investigated using photoluminescence (PL) spectroscopy. This coupled hybrid nanostructure shows a single PL peak from the QD emission at low excitation intensity and a band filling behavior is observed as the excitation intensity increases, suggesting that there exists a channel to capture carriers from the QW to the QDs. Time resolved PL (TRPL) measurements extract a carrier tunneling time of 103.7â¯ps, which is only one third of the theoretical prediction. A double-channel resonant carrier tunneling mechanism from the QW to the wetting layer and to the fifth excited state of the QDs and then carrier relaxation into lower discrete QD energy states is proposed to explain this fast carrier tunneling. The double-channel resonant carrier tunneling mechanism is qualitatively supported through the analysis of the excitation-dependent PL spectra as well as the PL excitation spectra. These results enrich our understanding of carrier dynamics in coupled QD and QW hybrid structures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 202, October 2018, Pages 20-26
Journal: Journal of Luminescence - Volume 202, October 2018, Pages 20-26
نویسندگان
Ying Wang, Xinzhi Sheng, Qing Yuan, Qinglin Guo, Shufang Wang, Guangsheng Fu, Baolai Liang, Diana L. Huffaker, Yuriy I. Mazur, Yurii Maidaniuk, Morgan E. Ware, Gregory J. Salamo,