کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7839913 1505862 2018 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of Er local surrounding on photoluminescence of Si Er co-doped ZnO film
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Effect of Er local surrounding on photoluminescence of Si Er co-doped ZnO film
چکیده انگلیسی
Er2O3:ZnO layers were deposited on SiO2/Si substrates by conventional magnetron sputtering under room temperature(RT), the Si doped Er: ZnO films were achieved by direct Si implantation with various Si doses(ranging from 4 *1015 to 2.5 *1016 cm−2) and post annealing at two different temperatures 950 and 1200 °C. Surface morphological and structure properties were measured by optical microscope, x-ray diffraction (XRD) and transmission electron microscope (TEM). The Er-Si-O compounds were obtained in Si doped Er: ZnO sample after annealed at 1200 °C. An increased photoluminescence (PL) intensity and widened profile are attributed to the change of local surrounding of Er caused by modification of ZnO lattice and the formation of Er-Si-O compounds.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 200, August 2018, Pages 9-13
نویسندگان
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