کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7839913 | 1505862 | 2018 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of Er local surrounding on photoluminescence of Si Er co-doped ZnO film
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Er2O3:ZnO layers were deposited on SiO2/Si substrates by conventional magnetron sputtering under room temperature(RT), the Si doped Er: ZnO films were achieved by direct Si implantation with various Si doses(ranging from 4â¯*1015 to 2.5â¯*1016 cmâ2) and post annealing at two different temperatures 950 and 1200â¯Â°C. Surface morphological and structure properties were measured by optical microscope, x-ray diffraction (XRD) and transmission electron microscope (TEM). The Er-Si-O compounds were obtained in Si doped Er: ZnO sample after annealed at 1200â¯Â°C. An increased photoluminescence (PL) intensity and widened profile are attributed to the change of local surrounding of Er caused by modification of ZnO lattice and the formation of Er-Si-O compounds.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 200, August 2018, Pages 9-13
Journal: Journal of Luminescence - Volume 200, August 2018, Pages 9-13
نویسندگان
Kaikai Li, Fei Lu, Ranran Fan, Changdong Ma, Bo Xu,