کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7839960 | 1505862 | 2018 | 27 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Role of Pzn-2Vzn centre on the luminescence properties of phosphorus doped ZnO thin films by varying doping concentration
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Zinc oxide (ZnO) thin films were deposited using RF sputtering followed by plasma immersion ion implantation for 10-70â¯s to dope phosphorus on ZnO. Optical and structural characteristics from particular experiments (Photoluminescence (PL)), High resolution X-ray diffraction (HRXRD) and energy dispersive x-ray spectroscopy (EDX) confirms presence of phosphorus doping in implanted ZnO thin films. Dominant peak at around 3.35â¯eV measured from low temperature PL (18â¯K) measurement which assign as neutral acceptor-bound exciton peak. Two peaks: free electron acceptor and donor bound acceptor were observed at around 3.32 and 3.25â¯eV. The acceptor level was observed at 107â¯meV above the valence band. All samples exhibited dominant (002) crystal orientation peak in HRXRD measurements, indicating perfect c-axis orientation. Highest carrier (hole) concentration of 9.94â¯Ãâ¯1017 cmâ3 was measured from 60â¯s implanted sample. Formation of complex acceptor PZn-2VZn was justified by EDX measurements.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 200, August 2018, Pages 120-125
Journal: Journal of Luminescence - Volume 200, August 2018, Pages 120-125
نویسندگان
Punam Murkute, Sushama Vatsa, Hemant Ghadi, Shantanu Saha, Subhananda Chakrabarti,