Hot carriers induced quenching of defects luminescence in Si doped AlN with Al core

We investigated the spatial cathodoluminescence (CL) quenching of Si doped AlN/Al shell/core particles along the radial direction. The quenching characteristic position gradually shifts to a more central location with emission wavelength increasing. This effect is due to the transport process of hot electrons, which produced by Al-plasmon decay via Landau damping. In this transport process, donor levels (Di) in AlN were partly occupied by hot electrons from Al core, which will reduce the quantum efficiency of recombination channel i (Di to Ai). A phenomenological theory has been used to discuss carriers recombination dynamics processes.