کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7840270 | 1505864 | 2018 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of luminescence quenching and persistent luminescence in Ce3+ doped (Gd,Y)3(Al,Ga)5O12 garnet using vacuum referred binding energy diagram
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Investigation of luminescence quenching and persistent luminescence in Ce3+ doped (Gd,Y)3(Al,Ga)5O12 garnet using vacuum referred binding energy diagram Investigation of luminescence quenching and persistent luminescence in Ce3+ doped (Gd,Y)3(Al,Ga)5O12 garnet using vacuum referred binding energy diagram](/preview/png/7840270.png)
چکیده انگلیسی
Optical properties of Ce3+:5dâ4f luminescence in garnet compounds are strongly related to the energy locations of the excited 5d levels and the host conduction band (CB). By constructing the vacuum referred binding energy (VRBE) diagram including information on these energy location for GdyY3-yAl5-xGaxO12 garnet (GYAGG) from the measured spectroscopic data, the luminescence quenching and persistent luminescence properties of GYAGG:Ce3+(-Cr3+) were discussed. The quantum yield (QY) of Ce3+:5dâ4f in GYAGG:Ce3+ is clearly related to the energy gap, ÎE5d1âCB, between the lowest 5d level and the bottom of conduction band in the constructed VRBE diagram. This result indicates that the luminescence quenching of GYAGG:Ce3+ is caused by the thermal ionization. For GYAGG:Ce3+-Cr3+ persistent phosphors, the depth of the electron trap formed by Cr3+ was remarkably changed from 0.27 to 0.69â¯eV by varying the Gd and Ga contents. The estimated VRBE value of Cr2+ in GYAGG can be used as effective value to predict the electron trap depth by Cr3+ in other oxide compounds as well as garnet hosts.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 198, June 2018, Pages 418-426
Journal: Journal of Luminescence - Volume 198, June 2018, Pages 418-426
نویسندگان
Kazuki Asami, Jumpei Ueda, Mamoru Kitaura, Setsuhisa Tanabe,