کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7840408 | 1505867 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Abnormal photoluminescence for GaAs/Al0.2Ga0.8As quantum dot-ring hybrid nanostructure grown by droplet epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Abnormal photoluminescence for GaAs/Al0.2Ga0.8As quantum dot-ring hybrid nanostructure grown by droplet epitaxy Abnormal photoluminescence for GaAs/Al0.2Ga0.8As quantum dot-ring hybrid nanostructure grown by droplet epitaxy](/preview/png/7840408.png)
چکیده انگلیسی
The optical properties have been investigated for the GaAs/Al0.2Ga0.8As quantum dot-ring hybrid nanostructures grown by droplet epitaxy, in which each nanostructure consists of four quantum dots (QDs) sitting on a distinct ring of GaAs. A blueshift and narrowing of the photoluminescence (PL) spectra along with the nonlinear decay of the time-resolved PL curves of the QDs have been observed. These abnormal PL behaviors are caused by the unique state filling effect correlated with the quantum dot-ring structure feature, which is strongly affected by carrier transfer from smaller dots to larger dots via the wetting ring in the GaAs/Al0.2Ga0.8As hybrid structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 195, March 2018, Pages 187-192
Journal: Journal of Luminescence - Volume 195, March 2018, Pages 187-192
نویسندگان
Linlin Su, Baolai Liang, Ying Wang, Qing Yuan, Qinglin Guo, Shufang Wang, Guangsheng Fu, Diana L. Huffaker, Yuriy I. Mazur, Morgan E. Ware, Yurii Maidaniuk, Gregory J. Salamo,