کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
78479 | 49332 | 2012 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic property analysis of O-doped Cu3SbS3
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electronic property analysis of O-doped Cu3SbS3 Electronic property analysis of O-doped Cu3SbS3](/preview/png/78479.png)
چکیده انگلیسی
The ternary Cu–Sb–S semiconductors are considered to be sustainable and potential alternative absorber materials in thin film photovoltaic applications. In these compounds, several phases may coexist, albeit in different proportions depending on experimental growth conditions. Additionally, the photovoltaic efficiency could be increased with isoelectronic doping. In this work we analyze the electronic properties of O-doped Cu3SbS3 in two structures: the wittichenite and the skinnerite. We use first-principles within the density functional formalism with two different exchange–correlation potentials. In addition, we estimate the potential of these compounds for photovoltaic applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 104, September 2012, Pages 180–184
Journal: Solar Energy Materials and Solar Cells - Volume 104, September 2012, Pages 180–184
نویسندگان
C. Tablero,