کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
78630 | 49338 | 2011 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Tunnel current through a miniband in InGaAs quantum dot superlattice solar cells Tunnel current through a miniband in InGaAs quantum dot superlattice solar cells](/preview/png/78630.png)
We report the tunnel current through a miniband in In0.4Ga0.6As quantum dot (QD) superlattice solar cells fabricated using molecular beam epitaxy. High-quality and well-aligned In0.4Ga0.6As QD superlattice structures with an interdot spacing of 3.5 nm were grown without using a strain balancing technique. 10-stack In0.4Ga0.6As QD superlattice solar cells had a high open circuit voltage and good cell characteristics even when the interdot spacing was reduced to 3.5 nm. Moreover, a short-circuit current density increases as the interdot spacing decreases. From the temperature dependence of the external quantum efficiency for QD solar cells with different interdot spacings, we observed the tunnel current through a miniband in QD superlattices with an interdot spacing of 3.5 nm.
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► We report tunnel current through a miniband in InGaAs QD superlattice solar cells.
► 10-stack InGaAs QD superlattice solar cells have a high Voc.
► Jsc increases as the interdot spacing decreases to 3.5 nm.
► Temperature dependence of EQE spectra indicates the tunnel current through minibands.
Journal: Solar Energy Materials and Solar Cells - Volume 95, Issue 10, October 2011, Pages 2920–2923