Metamorphic quantum dot nanostructures for long wavelength operation with enhanced emission efficiency

To counterbalance the blue-shift resulting from the use of these additional barriers, we introduce a red-shift by using the QD strain engineering approach, based on the reduction of QD strain, deriving from the decrease of the QD-CL mismatch; the combined use of QD strain engineering and enhanced barriers to confine carriers into QDs allows us to obtain room temperature emission up to 1.46 μm. These findings indicate that QD strain engineering with the use of additional barriers is a viable approach to achieve efficient room temperature emission from QD structures in the long wavelength spectral windows for telecom application.