Inkjet printed chalcopyrite CuInxGa1−xSe2 thin film solar cells

In this paper, we report a novel approach for the fabrication of chalcopyrite CuInxGa1−xSe2 thin film solar cells by inkjet printing. The short circuit current (Jsc), open circuit voltage (Voc), fill factor (FF), and total area power conversion efficiency (η) of the device are 29.78 mA/cm2, 386 mV, 0.44%, and 5.04%, respectively. Inkjet printing at atmospheric environment offers an opportunity for the direct patterning of absorber materials at large scale. This provides a potential cost advantage over conventional fabrication process that involves sequential deposition, patterning, and etching of selected materials. In addition, inkjet printing increases the raw material utilization ratio compared to more wasteful vacuum-based deposition techniques.

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► CIGS chalcopyrite thin film solar cells with respectable efficiency (η=5.04%) were fabricated by inkjet printing for the first time.
► Precursor ink is air-stable and converted to CIGS under atmospheric pressure.
► Reported process has high raw material utilization and significant cost advantage over conventional vacuum processes.