Results of a gallium phosphide photovoltaic junction with an AR coating under concentration of natural sunlight

A gallium phosphide (GaP) photovoltaic junction is grown by molecular beam epitaxy (MBE) on a GaP substrate. An anti-reflection coating of polymethyl methacrylate (PMMA) is applied and the cell is measured under concentrations of 1× and 10.7× in an outdoor setting. Efficiencies up to 2.6% and open circuit voltages up to 1.57 V are reported.

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► GaP n–p solar junction grown by MBE.
► PMMA deposited as anti-reflection coating.
► Solar measurements taken outdoors in natural sunlight and under concentration.
► Measurements corroborated with simulation.
► Efficiency of 2.6% at 1 sun and Voc of 1.57 V at 10.7× concentration achieved.