Influence of ZnO interlayer on the performance of inverted organic photovoltaic device

Inverted organic photovoltaic devices with a structure of fluorine tin oxide (FTO)/ZnO/poly(3-hexylthiophene) (P3HT):[6,6]-phenyl C61 butyric acid methyl ester (PCBM)/Ag were fabricated, in which ZnO interlayer serves as an electron selective layer. The ZnO interlayer includes three different nanostructures: polycrystalline seed layer, polycrystalline seed layer/loose nanopillars and polycrystalline seed layer/dense nanopillars. The influences of the different ZnO interlayers on the device performance were investigated. It is concluded that the polycrystalline seed layer/loose nanopillars offer more interfacial area with the P3HT:PCBM blends and acts as a continuous conducting path to the cathode. Our results demonstrate that effective infiltration of the blends into the ZnO nanopillars is critical for optimizing the device performance.

Inverted organic photovoltaic devices with a structure of FTO/ZnO/P3HT:PCBM/Ag were fabricated, in which ZnO interlayer serves as an electron selective layer. The influences of the different ZnO interlayers on the device performance were investigated. Our results demonstrate that effective infiltration of the blends into the ZnO nanopillars is critical for optimizing the device performance.Figure optionsDownload as PowerPoint slideHighlights
► Inverted organic photovoltaic devices with a structure of FTO/ZnO/P3HT:PCBM/Ag were fabricated.
► Aligned ZnO nanopillars were prepared via a solution approach.
► Influences of the different ZnO interlayers on the device performance were investigated.
► Effective infiltration of the blends (P3HT:PCBM) into the ZnO nanopillars is critical for optimizing the device performance.