کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
79122 | 49349 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ambient stability of wet chemically passivated germanium wafer for crystalline solar cells
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Ambient stability of wet chemically passivated germanium wafer for crystalline solar cells Ambient stability of wet chemically passivated germanium wafer for crystalline solar cells](/preview/png/79122.png)
چکیده انگلیسی
Surface passivation has been recognized as a crucial step in the evaluation of minority carrier lifetime of photovoltaic materials as well as in the fabrication of high efficient solar cells. Dilute acids of HF and HCl are employed for germanium (Ge) surface passivation. An effective lifetime of passivated Ge wafers has been evaluated by a microwave photoconductive decay (μ-PCD) measurement. Surface recombination velocities, S, of H- and Cl-terminated Ge surfaces are 23 and 37 cm/s, respectively. The stability of passivated Ge surfaces against exposure to air has also been examined. The HCl-passivated Ge surfaces are found to be more robust than HF-passivated surfaces.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 95, Issue 1, January 2011, Pages 84–88
Journal: Solar Energy Materials and Solar Cells - Volume 95, Issue 1, January 2011, Pages 84–88
نویسندگان
Bibhu P. Swain, Hidetaka Takato, Zhengxin Liu, Isao Sakata,