کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
79163 | 49349 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of CuInAlSe2 film with double graded bandgap using Mo(Al) back contact
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Formation of CuInAlSe2 film with double graded bandgap using Mo(Al) back contact Formation of CuInAlSe2 film with double graded bandgap using Mo(Al) back contact](/preview/png/79163.png)
چکیده انگلیسی
Using Al added Mo back electrode to provide Al source to form CuInAlSe2 (CIAS) absorber with self-formed double graded bandgap (or Al concentration) is reported. The double Al grading is self-forming and requires no process tweaking or modification. A 15 at % Al in Mo(Al) film yielded 0.39 Al/(In+Al) ratio in the CIAS film with a bandgap of 1.54 eV at the surface. The benefits of doping Al into Mo film are: lower resistance of the Mo layer, improved Mo to glass adhesion, increased surface electric field or improved minority carrier collection from the graded Al content (graded bandgap), and supply Al to form a CIAS absorber layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 95, Issue 1, January 2011, Pages 257–260
Journal: Solar Energy Materials and Solar Cells - Volume 95, Issue 1, January 2011, Pages 257–260
نویسندگان
Dung-Ching Perng, Jhin-Wei Chen, Chyi-Jeng Wu,