کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
79325 | 49352 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of C–V characteristics in thin n+-p-p+ silicon solar cells and induced junction n-p-p+ cell structures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Capacitance–voltage (C–V) measurements were carried out on conventional n+-p-p+ structure based silicon solar cells (SSC) of different thicknesses (40–300 μm) and on induced junction n+-p-p+ structures (IJS) under dark at room temperature. The capacitance is determined from the best fit of the measured data. It is shown that the capacitance under reverse and forward bias condition can be divided into two distinct regions, which are correlated to the quality of the junction and effectiveness of back surface field (BSF). It is found that the IJS has shallow junction and better BSF than the conventional solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 94, Issue 9, September 2010, Pages 1469–1472
Journal: Solar Energy Materials and Solar Cells - Volume 94, Issue 9, September 2010, Pages 1469–1472
نویسندگان
Sanjai Kumar, Vikash Sareen, Neha Batra, P.K. Singh,