کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
79329 | 49352 | 2010 | 5 صفحه PDF | دانلود رایگان |
In2S3 films of different thicknesses were deposited onto Corning 7059 glass substrates using close spaced evaporation method, at a constant substrate temperature and growth rate of 300 °C and 30 Å/s, respectively. The deposited layers were then annealed in vacuum at temperatures (Ta) in the range 100–500 °C for 1 h and changes in the chemical and physical properties of the layers were investigated. The films annealed at Ta<300 °C resulted in films that consisted of both cubic and tetragonal phases, while for films annealed at Ta ≥300 °C only the tetragonal β-In2S3 phase was found to be present. A considerable change in morphology was observed for the film thickness of >300 nm and annealing temperature of 300 °C. A highest optical transmittance was found to be 92% in the annealing temperature range, 300 °C
Journal: Solar Energy Materials and Solar Cells - Volume 94, Issue 9, September 2010, Pages 1487–1491