Temperature of silicon wafers during in-line high-rate evaporation of aluminum

Knowing the substrate temperature during in-line high-rate Al deposition onto silicon solar cells is essential for understanding and improving the deposition process. We deposit 2 and 5 μm-thick aluminum layers at a dynamic deposition rate of 5 μm m/min onto 130 and 180 μm-thick, planar and pyramidally textured, p-type silicon wafers and measure the wafer temperature during the deposition. The temperature depends on the aluminum layer thickness, the wafer thickness, and the wafer emissivity. Two-dimensional finite-element simulations reproduce the measured peak temperatures with an accuracy of 3%.

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► We measure the temperature of silicon wafers during in-line evaporation of aluminum.
► Temperature depends on Al layer thickness, wafer thickness, and wafer emissivity.
► Simulations reproduce the measured peak temperatures with an accuracy of 3%.
► Simulation enables the optimization of the process regarding temperature limits.