Towards ink-jet printed fine line front side metallization of crystalline silicon solar cells

An ink-jet method for fabrication of fine and smooth front side highly conductive silver lines on crystalline Silicon substrate is described. The fabricated conductive silver lines on different substrates are characterized by means optical microscope, optical profilometers, scanning electron microscope (SEM), and electrical measurements. The coffee-ring effect is controlled by increasing the solid loading of the ink from 20 W% to 40 W% and printing at optimum substrate temperature (90–100 °C) and optimum printing parameters. Smooth printed conductive silver lines, with line thickness ranges from 0.8∼0.9 μm for single pass, are obtained. When increased substrate temperature, a significant reduction of spreading of ink was observed. And conductive silver lines obtained at optimum substrate temperature (90–100 °C), free of periodic wrinkles and line bleeding, are produced. The influence of annealing temperature on line resistance, the morphology and functionality of the printed conductive silver lines is optically and electrically analyzed. To deposit thicker lines multiple passes of ink-jet printing were done on polished single crystalline silicon (sc-Si) and standard alkaline (NaOH) textured n+/p single crystalline silicon (n+/p sc-Si). Moreover, the printed conductive silver lines are characterized optically and electrically. And, promising results in terms of printed line thickness and electrical property are achieved.

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