کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
79552 | 49360 | 2010 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Dry fabrication process for heterojunction solar cells through in-situ plasma cleaning and passivation Dry fabrication process for heterojunction solar cells through in-situ plasma cleaning and passivation](/preview/png/79552.png)
We have studied low temperature plasma processes (Tsub≤200 °C) for the efficient cleaning and passivation of c-Si wafers, aiming for fully dry fabrication of heterojunction solar cells. We have experimented with H2–SiF4 plasmas in a standard RF PECVD reactor in order to etch the native oxide from the c-Si wafer and a thin a-Si:H layer was deposited from SiH4 to passivate the c-Si surface. In-situ ellipsometry was used to optimize the process conditions for an efficient surface cleaning. Various plasma treatments were performed before a-Si:H deposition in order to reduce the surface recombination. Optimized process conditions resulted in high effective lifetime values (τeff≈1.55 ms), low effective surface recombination velocities (Seff≤9 cm s−1) and high implicit open circuit voltages (Voc≈0.713 V).
Journal: Solar Energy Materials and Solar Cells - Volume 94, Issue 3, March 2010, Pages 402–405