کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7963471 | 1514145 | 2018 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Recrystallization behavior and thermal shock resistance of the W-1.0â¯wt% TaC alloy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی هسته ای و مهندسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Recrystallization behavior and thermal shock resistance of the W-1.0â¯wt% TaC alloy Recrystallization behavior and thermal shock resistance of the W-1.0â¯wt% TaC alloy](/preview/png/7963471.png)
چکیده انگلیسی
The high-temperature stability and good mechanical strength of tungsten (W) alloys are highly desirable for a wide range of fusion applications, which can be achieved by dispersion strengthening. In this paper, TaC dispersion effects on the thermal stabilities, tensile properties and thermal shock resistances have been investigated. A hot-rolled W-1.0â¯wt% TaC plate has been fabricated which contains the high tensile strength and elongation. Nanosized particles in the W matrix improve the recrystallization temperature to about 1400â¯Â°C and the ultimate tensile strength to 571â¯MPaâ¯at 500â¯Â°C through hindering grain boundary migration, pinning dislocations and refining grains. The effects of edge-localized mode like transient heat events on the rolled and recrystallized W-1.0â¯wt% TaC alloys were investigated systematically. The cracking threshold (100 shots) at room temperature is in the range of 0.33-0.44â¯GW/m2 for the rolled W-1.0â¯wt% TaC. Recrystallization degrades mechanical strength and makes the material more prone to thermal shock damages. Coarse Ta2O5 and Ta-Cx-Oy particles are easy to fracture and introduce a preferential crack initiation in W matrix during cyclic heat loads.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Nuclear Materials - Volume 501, 1 April 2018, Pages 282-292
Journal: Journal of Nuclear Materials - Volume 501, 1 April 2018, Pages 282-292
نویسندگان
Z.M. Xie, S. Miao, T. Zhang, R. Liu, X.P. Wang, Q.F. Fang, T. Hao, Z. Zhuang, C.S. Liu, Y.Y. Lian, X. Liu, L.H. Cai,