Improving the efficiency of crystalline silicon solar cells by an intersected selective laser doping

The selective emitter technology is the most effective method to improve the silicon solar cell performance. However, the strict alignment requirements between the Ag gridlines and the selective emitters should be addressed. In the present study, a novel front metal contact patterning scheme for crystalline silicon (c-Si) solar cells is developed. An intersected selective laser doping process is applied. The control experiment indicates that the best efficiency increases for ∼23.8% from ∼14.39% to ∼17.74% after receiving the laser doping process. Moreover, our laser doping process does not affect the open-circuit voltage and short-circuit current significantly and the emitter properties have not been degraded in terms of the emitter saturation current. The improved front metal contact results in the improved energy conversion efficiency. The developed process offers an elegant and reliable approach for the low-cost, high throughput industrial-scale production process.

The Ag lines are intersected to the heavily doped selective emitters, realizing the self-aligned process.Figure optionsDownload as PowerPoint slideHighlights
► A novel front metal contact scheme for c-Si solar cells has been developed.
► A selective emitter has been realized by a selective laser doping process.
► The selective emitter is intersected to front silver contact.
► An easy alignment process has been realized.
► The improved front metal contact results in the improved efficiency.