کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7965413 | 1514180 | 2015 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of temperature and surface orientation on migration behaviours of helium atoms near tungsten surfaces
ترجمه فارسی عنوان
اثرات دما و جهت گیری سطحی بر رفتار مهاجرت اتم های هلیوم در نزدیکی سطوح تنگستن
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کلمات کلیدی
دینامیک مولکولی، رفتار هلیم، تنگستن، سطحی نزدیک، نفوذ،
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی هسته ای و مهندسی
چکیده انگلیسی
Molecular dynamics simulations were performed to study the dependence of migration behaviours of single helium atoms near tungsten surfaces on the surface orientation and temperature. For W{100} and W{110} surfaces, He atoms can quickly escape out near the surface without accumulation even at a temperature of 400Â K. The behaviours of helium atoms can be well-described by the theory of continuous diffusion of particles in a semi-infinite medium. For a W{111} surface, the situation is complex. Different types of trap mutations occur within the neighbouring region of the W{111} surface. The trap mutations hinder the escape of He atoms, resulting in their accumulation. The probability of a He atom escaping into vacuum from a trap mutation depends on the type of the trap mutation, and the occurrence probabilities of the different types of trap mutations are dependent on the temperature. This finding suggests that the escape rate of He atoms on the W{111} surface does not show a monotonic dependence on temperature. For instance, the escape rate at TÂ =Â 1500Â K is lower than the rate at TÂ =Â 1100Â K. Our results are useful for understanding the structural evolution and He release on tungsten surfaces and for designing models in other simulation methods beyond molecular dynamics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Nuclear Materials - Volume 465, October 2015, Pages 455-463
Journal: Journal of Nuclear Materials - Volume 465, October 2015, Pages 455-463
نویسندگان
Xiaoshuang Wang, Zhangwen Wu, Qing Hou,