کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
79858 | 49367 | 2010 | 6 صفحه PDF | دانلود رایگان |
We present a spatial analysis of biased polycrystalline silicon solar cell samples at cryogenic temperatures by the ion beam-induced charge technique. Performing the measurements at cryogenic temperatures leads to freezing out of deep trapping centers, a reduction of the specimen’s capacitance, an increase in the mobility of carriers, and an improvement in the signal to noise ratio and charge collection efficiency. At this low temperature, it permits a higher sensitivity analysis when compared to room temperature measurements, which are limited to zero bias due to leakage current that occurs via surface carrier trapping and detrapping along the grain boundaries. As a result we find the images are significantly more sensitive to subtle differences in charge collection efficiency arising from intra-grain defects.
Journal: Solar Energy Materials and Solar Cells - Volume 94, Issue 12, December 2010, Pages 2405–2410