کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7990040 | 1516125 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low resistivity phase-pure n-type Cu2O films realized via post-deposition nitrogen plasma treatment
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Cu2O films were deposited on the sapphire substrates by pulsed laser deposition. The effects of nitrogen plasma treatment on the properties of the Cu2O films were studied. A phase transition from pure Cu2O to mixture of Cu2O and Cu and a change from p to n-type conduction were observed after the films being treated for different durations. The optical band gap of the films varied from 2.51 to 2.56â¯eV. Phase-pure n-type Cu2O film having a very smooth surface, a low resistivity of 20.50â¯Î©â¯cm and a moderate Hall mobility of 3.76â¯cm2·vâ1·sâ1 was obtained for the 10â¯min plasma treated sample. The n-type conduction mechanism was discussed and clarified.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 769, 15 November 2018, Pages 484-489
Journal: Journal of Alloys and Compounds - Volume 769, 15 November 2018, Pages 484-489
نویسندگان
Meng Xu, Xiaohui Liu, Weidong Xu, Huayong Xu, Xiaotao Hao, Xianjin Feng,