Electrical properties of columnar Sb-doped MgZnO film grown by metalorganic chemical vapor deposition

We report on the electrical properties of columnar Sb-doped MgZnO (MgZnO:Sb) films grown by metalorganic chemical vapor deposition (MOCVD). Hall effect and C-V measurements showed different carrier types and concentrations in the columnar MgZnO:Sb film. The Hall effect measurements showed both n-type and p-type conductivity randomly across repeated measurements. In contrast, the C-V measurements showed only p-type conductivity across repeated measurements, and the hole concentration was estimated to be 1.46 × 1019 cm−3. We show that carrier type and concentration in columnar MgZnO:Sb films should be measured vertically rather than laterally due to the large defect scattering at the grain boundaries of the columnar structures.