کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7991799 | 1516144 | 2018 | 29 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High energy-storage performance of BNT-BT-NN ferroelectric thin films prepared by RF magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Dielectric materials with high energy-storage density and efficiency have great potential applications in modern electric and electronic devices. In this work, a series of 0.9(0.94Bi0.5Na0.5TiO3-0.06BaTiO3)-0.1NaNbO3 (BNT-BT-NN) ferroelectric thin films were deposited on LaNiO3 (LNO) bottom electrodes by radio-frequency (RF) magnetron sputtering technique. The effects of different annealing temperature on microstructure, dielectric property and energy-storage performance of these thin films were studied in detail. Post-deposition annealing of BNT-BT-NN thin films at an appropriate temperature of 650â¯Â°C was found to greatly improve the film structure and enhance the electrical characteristics, such as dense structure, smooth surface, low leakage current density, high breakdown strength (BDS) and large difference between maximum and remanent polarization. As a result, a huge energy-storage density of 32â¯J/cm3 and a large energy-storage efficiency of 90% were achieved under 3170â¯kV/cm in the thin film which was annealed at 650â¯Â°C. Moreover, the thin film exhibited a stable energy-storage performance under different temperature and frequency. Therefore, BNT-BT-NN thin film with proper annealing temperature is a promising candidate for high energy-storage capacitors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 750, 25 June 2018, Pages 228-234
Journal: Journal of Alloys and Compounds - Volume 750, 25 June 2018, Pages 228-234
نویسندگان
Yuan Yao, Yong Li, Ningning Sun, Jinhua Du, Xiaowei Li, Liwen Zhang, Qiwei Zhang, Xihong Hao,