کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
79919 | 49369 | 2009 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Direct patterned etching of silicon dioxide and silicon nitride dielectric layers by inkjet printing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
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چکیده انگلیسی
An inkjet method for the direct patterned etching of silicon dioxide and silicon nitride dielectric is described. The method involves fewer steps, lower chemical usage and generates less hazardous chemical waste than existing resist-based patterning methods (e.g., photolithography), which employ immersion etching. Holes of diameter 40–50 μm and grooves 50–60 μm wide were etched in 300 nm silicon dioxide layers. Grooves were also etched in 75 nm silicon nitride layers formed on textured silicon surfaces. The resulting patterned dielectric layers were used to facilitate masked etching, local diffusions and metal contacting of underlying silicon for solar cell applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 93, Issue 10, October 2009, Pages 1865–1874
Journal: Solar Energy Materials and Solar Cells - Volume 93, Issue 10, October 2009, Pages 1865–1874
نویسندگان
Alison J. Lennon, Anita W.Y. Ho-Baillie, Stuart R. Wenham,