کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7993075 | 1516151 | 2018 | 26 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Memory switching of chalcogenide glass Se85 Te15 X5 (x=In, Sn) films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Memory switching of chalcogenide glass Se85 Te15 X5 (x=In, Sn) films Memory switching of chalcogenide glass Se85 Te15 X5 (x=In, Sn) films](/preview/png/7993075.png)
چکیده انگلیسی
Various factors as temperature, thickness and element addition effect on the electrical conductivity and switching phenomenon in Se85 Te15 X5 (x=In, Sn)films was examined and discussed herein. Structural identification of the film compositions is confirmed by X-ray diffraction patterns (XRD), energy dispersive X-ray analysis (EDX) and differential thermal analysis (DTA). The obtained results of the temperature dependence of dc conductivity are explained in accordance with Mott and Davis model. The switching phenomenon obtained was of memory type. The mean value of the threshold voltage was found to be dependent on temperature, film thickness d and composition. Values of the threshold voltage activation energy ε¯Vth were obtained for the investigated compositions. The obtained results agree with the electrothermal model for the switching process. The addition of Sn to Se-Te system leads to a decrease in the studied parameters (Tg, ÎEÏ, V¯th) than that obtained for In addition which correlated with the nature of bonds between elements of the studied compositions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 743, 30 April 2018, Pages 36-43
Journal: Journal of Alloys and Compounds - Volume 743, 30 April 2018, Pages 36-43
نویسندگان
N.A. Hegab, A.S. Farid, E. Abd El-Wahabb, H. Magdy,