کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7994554 | 1516160 | 2018 | 22 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Surface layer and its effect on dielectric properties of SiC ceramics
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
The dielectric properties of SiC ceramics were investigated in the temperature range from room temperature to 873Â K and frequency range from 102 to 106Â Hz. Giant dielectric behavior was observed in SiC ceramics in the temperature range above 600Â K. This behavior strongly depends on sample thickness. Our results revealed that the surface of the sintered SiC sample was covered by a SiO2 layer. Oxygen vacancies in the surface layer diffuse into the inner part giving rise to two thermally activated dielectric relaxations. The low-temperature relaxation was argued to be a polaron relaxation caused by the hopping motions of oxygen vacancies, whereas the high-temperature one is a Maxwell-Wagner relaxation mainly caused by the surface layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 734, 15 February 2018, Pages 16-21
Journal: Journal of Alloys and Compounds - Volume 734, 15 February 2018, Pages 16-21
نویسندگان
J. Zhang, D.Y. Xu, L. Tong, H.C. Qi, D.L. Zhang, C.C. Wang,